|The FBK Centre for Services & Devices (CSD) is an applied research center that operates in the following scientific and technological areas: materials and interfaces, devices and microsystems, integrated systems. The CSD has extremely advanced technical know-how in applied materials science, as well as innovative detector design and fabrication technologies. The strategic mission of the CSD is scientific excellence combined with the ability to exploit research results. The innovation model is open to collaboration in national and international expertise networks.
IRIS Research Unit carries out R&D activities on advanced radiation and image sensors fabricated within both full custom and standard CMOS technologies. The main research activities of the group are on the design and characterization of silicon radiation detectors, single-photon sensors and advanced image sensors.
More information about IRIS is available at http://iris.fbk.eu
Silicon detectors with internal amplification, such as Silicon Photomultipliers (SiPMs), are currently of great interest in several scientific, medicine and industrial applications, exploiting their extremely high sensitivity and the excellent single-photon time resolution. SiPMs are being evaluated for the detection of light signals in the vast majority of big science experiments planned for the future, from the HL-LHC upgrades (CMS, LHCb) to future Dark Matter, Neutrino and rare-event detection experiments (DarkSide, DUNE, nEXO), but also in commercial applications (nuclear medicine, such as PET, space and automotive LiDAR applications). In this fields, FBK is at the forefront of developments, collaborating with CERN and several other research institutions, in the scientific sector, and with important companies, for commercial applications. To further improve SiPM performance in the next generations of devices, technologies such as Through Silicon Vias (TSVs) and Back Side Illumination (BSI) of devices will be applied to SiPMs in the coming years. FBK is currently undergoing a clean-room upgrade to acquire microfabrication capabilities in this fields and a significant part of the job that the Reseacher will do will be related to these activities.
In this context, we are looking for a Device Engineer who will work on the development and characterization of next generation low-level light sensors, such as single photon avalanche diodes (SPADs) and Silicon Photomultipliers (SiPMs), and their integration with TSV and BSI technologies.
The researcher’s tasks will be:
- to understand and improve device properties through TCAD simulations, process tuning and detector design;
- to conceive new technological solutions, new process flows and integration schemes, in particular related to TSVs and BSI devices;
- to carry out in depth, advanced functional characterization of SiPMs, including characterization of the detectors in a setup as close as possible to the final experiment / industrial application;
- to manage interactions and relations with scientific experiments and / or industrial partners, to better understand the specifications and tune the SiPM characteristics accordingly.
The activity will be carried out in tight collaboration with other device and process researchers, working in a highly motivated, team-oriented environment. Significant publication output is expected. If selected, the candidate will have the opportunity to work and acquire know-how on one of the currently most innovative and rapidly evolving radiation detector technology, the SiPM, which is of great interest for both science and industry.
The ideal candidate should have
- Master degree in Physics, Electronics or Material Science;
- Enthusiastic attitude to research activity;
- Good scientific background and ability to write scientific papers;
- Good knowledge of English (oral and written);
- Strong teamwork attitude;
- PhD in Physics, Electronics or related fields or equivalent 3-years research experience;
- Previous experience in a big scientific experiment and / or in a research environment;
- Background in semiconductor device physics;
- Background in semiconductor light sensors and their characterization;
- Knowledge of scintillator-based radiation detectors;
- Knowledge of silicon processing technology;
- Scientific publications relevant to the field of detectors in general and on SPAD / SiPMs in particular;
- Visiting scholarship or experience at international level.
The ideal candidate will have a physics or electronic engineering background. Previous experience in big science experiments, knowledge of semiconductor device physics, circuit electronics or electro-optical characterization techniques are preferred skills.
Type of contract: fixed term contract
Working hours: full time
Gross annual salary: from about € 34.500 to € 39.500, depending on the profile of the candidate
Start date: March 2021
End date: December 2023
Workplace: Povo, Trento (Italy)
Benefits: flexi-time, company subsidized cafeteria or meal vouchers, internal car park, welcome office support for visa formalities, accommodation etc., supplementary pension and health found, training courses, public transport, sports facilities, language courses fees.
More info at https://www.welfarefbk.info/
Candidates are required to submit their applications by clicking on "Apply online" in the end of this page. Please make sure that your application contains the following attachments (in pdf format):
- detailed CV
- letter of motivation
Application deadline: 11th March, 2021
Please read our Recruitment Regulations before completing your application.
For further information, please contact the Human Resources Services at firstname.lastname@example.org